Format

Send to

Choose Destination
J Nanosci Nanotechnol. 2018 Jun 1;18(6):4243-4247. doi: 10.1166/jnn.2018.15189.

Photodetector Based on Multilayer SnSe₂ Field Effect Transistor.

Author information

1
College of Information and Communication Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea.
2
Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 44610, Korea.
3
ICT Components and Materials Technology Research Division, Electronics and Telecommunications Research Institute, Daejeon 34129, Korea.

Abstract

We demonstrate a high-performance photodetector with multilayer tin diselenide (SnSe2) exfoliated from a high-quality crystal which was synthesized by the temperature gradient growth method. This SnSe2 photodetector exhibits high photoresponsivity of 5.11 × 105 A W-1 and high specific detectivity of 2.79 × 1013 Jones under laser irradiation (λ = 450 nm). We also observed a reproducible and stable time-resolved photoresponse to the incident laser beam from this SnSe2 photodetector, which can be used as a promising material for future optoelectronic applications.

PMID:
29442769
DOI:
10.1166/jnn.2018.15189

Supplemental Content

Full text links

Icon for Ingenta plc
Loading ...
Support Center