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J Phys Condens Matter. 2018 Mar 14;30(10):105303. doi: 10.1088/1361-648X/aaabaa.

Bismuth oxide film: a promising room-temperature quantum spin Hall insulator.

Author information

1
School of Physics and Technology, University of Jinan, Jinan, Shandong 250022, People's Republic of China. Advanced Materials Institute, Shandong Key Laboratory for High Strength Lightweight Metallic Materials, Qilu University of Technology (Shandong Academy of Science), Jinan, Shandong 250014, People's Republic of China.

Abstract

Two-dimensional (2D) bismuth films have attracted extensive attention due to their nontrivial band topology and tunable electronic properties for achieving dissipationless transport devices. The experimental observation of quantum transport properties, however, are rather challenging, limiting their potential application in nanodevices. Here, we predict, based on first-principles calculations, an alternative 2D bismuth oxide, BiO, as an excellent topological insulator (TI), whose intrinsic bulk gap reaches up to 0.28‚ÄČeV. Its nontrivial topology is confirmed by topological invariant Z 2 and time-reversal symmetry protected helical edge states. The appearance of topological phase is robust against mechanical strain and different levels of oxygen coverage in BiO. Since the BiO is naturally stable against surface oxidization and degradation, these results enrich the topological materials and present an alternative way to design topotronics devices at room temperature.

PMID:
29381144
DOI:
10.1088/1361-648X/aaabaa

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