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Nano Lett. 2018 Feb 14;18(2):1360-1365. doi: 10.1021/acs.nanolett.7b05075. Epub 2018 Feb 5.

Strongly Cavity-Enhanced Spontaneous Emission from Silicon-Vacancy Centers in Diamond.

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School of Engineering and Applied Sciences, Harvard University , Cambridge, Massachusetts 02138, United States.
Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory , Menlo Park, California 94025, United States.


Quantum emitters are an integral component for a broad range of quantum technologies, including quantum communication, quantum repeaters, and linear optical quantum computation. Solid-state color centers are promising candidates for scalable quantum optics due to their long coherence time and small inhomogeneous broadening. However, once excited, color centers often decay through phonon-assisted processes, limiting the efficiency of single-photon generation and photon-mediated entanglement generation. Herein, we demonstrate strong enhancement of spontaneous emission rate of a single silicon-vacancy center in diamond embedded within a monolithic optical cavity, reaching a regime in which the excited-state lifetime is dominated by spontaneous emission into the cavity mode. We observe 10-fold lifetime reduction and 42-fold enhancement in emission intensity when the cavity is tuned into resonance with the optical transition of a single silicon-vacancy center, corresponding to 90% of the excited-state energy decay occurring through spontaneous emission into the cavity mode. We also demonstrate the largest coupling strength (g/2π = 4.9 ± 0.3 GHz) and cooperativity (C = 1.4) to date for color-center-based cavity quantum electrodynamics systems, bringing the system closer to the strong coupling regime.


Purcell enhancement; color center; defect-center materials; diamond; nanophotonics; silicon-vacancy center; single-photon generation

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