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Sci Rep. 2018 Jan 10;8(1):404. doi: 10.1038/s41598-017-18746-4.

Formation of Two-dimensional Electron Gas at Amorphous/Crystalline Oxide Interfaces.

Author information

1
Department of Physics, Beijing Normal University, Beijing, 100875, China.
2
Department of Physics, Beijing Normal University, Beijing, 100875, China. jcnie@bnu.edu.cn.

Abstract

Experimentally, we found the percentage of low valence cations, the ionization energy of cations in film, and the band gap of substrates to be decisive for the formation of two-dimensional electron gas at the interface of amorphous/crystalline oxide (a-2DEG). Considering these findings, we inferred that the charge transfer from the film to the interface should be the main mechanism of a-2DEG formation. This charge transfer is induced by oxygen defects in film and can be eliminated by the electron-absorbing process of cations in the film. Based on this, we propose a simple dipole model that successfully explains the origin of a-2DEG, our experimental findings, and some important properties of a-2DEG.

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