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Adv Mater. 2018 Feb;30(7). doi: 10.1002/adma.201704401. Epub 2018 Jan 8.

Deformable Organic Nanowire Field-Effect Transistors.

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Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk, 37673, Republic of Korea.
Department of Chemical Engineering, Stanford University, Stanford, CA, 94305, USA.
Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA.
Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA.
Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA.
Corning Incorporated, Corning, NY, 14831, USA.
Department of Materials Science and Engineering, Research Institute of Advanced Materials, BK21 PLUS SNU Materials Division for Educating Creative Global Leaders, Seoul National University, Seoul, 08826, Republic of Korea.


Deformable electronic devices that are impervious to mechanical influence when mounted on surfaces of dynamically changing soft matters have great potential for next-generation implantable bioelectronic devices. Here, deformable field-effect transistors (FETs) composed of single organic nanowires (NWs) as the semiconductor are presented. The NWs are composed of fused thiophene diketopyrrolopyrrole based polymer semiconductor and high-molecular-weight polyethylene oxide as both the molecular binder and deformability enhancer. The obtained transistors show high field-effect mobility >8 cm2 V-1 s-1 with poly(vinylidenefluoride-co-trifluoroethylene) polymer dielectric and can easily be deformed by applied strains (both 100% tensile and compressive strains). The electrical reliability and mechanical durability of the NWs can be significantly enhanced by forming serpentine-like structures of the NWs. Remarkably, the fully deformable NW FETs withstand 3D volume changes (>1700% and reverting back to original state) of a rubber balloon with constant current output, on the surface of which it is attached. The deformable transistors can robustly operate without noticeable degradation on a mechanically dynamic soft matter surface, e.g., a pulsating balloon (pulse rate: 40 min-1 (0.67 Hz) and 40% volume expansion) that mimics a beating heart, which underscores its potential for future biomedical applications.


biomedical electronics; deformable electronics; nanowire electronics; nanowire transistors; stretchable transistors


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