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Nano Lett. 2018 Jan 10;18(1):101-108. doi: 10.1021/acs.nanolett.7b03486. Epub 2017 Dec 28.

Radial Growth of Self-Catalyzed GaAs Nanowires and the Evolution of the Liquid Ga-Droplet Studied by Time-Resolved in Situ X-ray Diffraction.

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Solid State Physics, Department of Physics, University of Siegen , Walter-Flex Straße 3, D-57068 Siegen, Germany.
Laboratory for Applications of Synchrotron Radiation, Karlsruhe Institute of Technology , Kaiserstraße 12, D-76131 Karlsruhe, Germany.
Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology , Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Germany.
Deutsches Elektronen-Synchrotron DESY , Notkestraße 85, D-22607 Hamburg, Germany.
Fachbereich Physik, Universität Hamburg , Jungiusstraße 9, D-20355 Hamburg, Germany.


We report on a growth study of self-catalyzed GaAs nanowires based on time-resolved in situ X-ray structure characterization during molecular-beam-epitaxy in combination with ex situ scanning-electron-microscopy. We reveal the evolution of nanowire radius and polytypism and distinguish radial growth processes responsible for tapering and side-wall growth. We interpret our results using a model for diameter self-stabilization processes during growth of self-catalyzed GaAs nanowires including the shape of the liquid Ga-droplet and its evolution during growth.


Nanowires; growth; in situ X-ray diffraction; molecular beam epitaxy; polytypism; self-catalyzed; tapering

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