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ACS Appl Mater Interfaces. 2018 Jan 10;10(1):1383-1388. doi: 10.1021/acsami.7b14795. Epub 2017 Dec 22.

Role of Oxygen in Ionic Liquid Gating on Two-Dimensional Cr2Ge2Te6: A Non-oxide Material.

Chen Y1,2, Xing W1,2, Wang X1,2, Shen B1,2, Yuan W1,2, Su T1,2, Ma Y1,2, Yao Y1,2, Zhong J1,2, Yun Y1,2, Xie XC1,2, Jia S1,2, Han W1,2.

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International Center for Quantum Materials, School of Physics, Peking University , Beijing 100871, PR China.
Collaborative Innovation Center of Quantum Matter, Beijing 100871, PR China.


Ionic liquid gating can markedly modulate a material's carrier density so as to induce metallization, superconductivity, and quantum phase transitions. One of the main issues is whether the mechanism of ionic liquid gating is an electrostatic field effect or an electrochemical effect, especially for oxide materials. Recent observation of the suppression of the ionic liquid gate-induced metallization in the presence of oxygen for oxide materials suggests the electrochemical effect. However, in more general scenarios, the role of oxygen in the ionic liquid gating effect is still unclear. Here, we perform ionic liquid gating experiments on a non-oxide material: two-dimensional ferromagnetic Cr2Ge2Te6. Our results demonstrate that despite the large increase of the gate leakage current in the presence of oxygen, the oxygen does not affect the ionic liquid gating effect onĀ  the channel resistance of Cr2Ge2Te6 devices (<5% difference), which suggests the electrostatic field effect as the mechanism on non-oxide materials. Moreover, our results show that ionic liquid gating is more effective on the modulation of the channel resistances compared to the back gating across the 300 nm thick SiO2.


channel resistance; electrostatic field effect; ionic liquid gating; iontronics; oxygen; two-dimensional ferromagnetic Cr2Ge2Te6


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