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Nano Lett. 2018 Jan 10;18(1):434-441. doi: 10.1021/acs.nanolett.7b04342. Epub 2017 Dec 19.

Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides.

Author information

1
Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758, United States.
2
Department of Materials Science and Engineering, College of Engineering, Peking University , Beijing 100871, China.
3
Institute for Molecular Engineering, University of Chicago , 5640 South Ellis Avenue, Chicago, Illinois 60637, United States.
4
Center for Nanoscale Materials, Argonne National Laboratory , 9700 Cass Avenue, Lemont, Illinois 60439, United States.
5
School of Materials Science and Engineering, Southeast University , 2 Southeast University Road, Nanjing 211189, China.

Abstract

Recently, two-dimensional (2D) atomic sheets have inspired new ideas in nanoscience including topologically protected charge transport,1,2 spatially separated excitons,3 and strongly anisotropic heat transport.4 Here, we report the intriguing observation of stable nonvolatile resistance switching (NVRS) in single-layer atomic sheets sandwiched between metal electrodes. NVRS is observed in the prototypical semiconducting (MX2, M = Mo, W; and X = S, Se) transitional metal dichalcogenides (TMDs),5 which alludes to the universality of this phenomenon in TMD monolayers and offers forming-free switching. This observation of NVRS phenomenon, widely attributed to ionic diffusion, filament, and interfacial redox in bulk oxides and electrolytes,6-9 inspires new studies on defects, ion transport, and energetics at the sharp interfaces between atomically thin sheets and conducting electrodes. Our findings overturn the contemporary thinking that nonvolatile switching is not scalable to subnanometre owing to leakage currents.10 Emerging device concepts in nonvolatile flexible memory fabrics, and brain-inspired (neuromorphic) computing could benefit substantially from the wide 2D materials design space. A new major application, zero-static power radio frequency (RF) switching, is demonstrated with a monolayer switch operating to 50 GHz.

KEYWORDS:

Nonvolatile memory; RF switch; TMD monolayer; flexible electronics

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