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Sci Adv. 2017 Nov 29;3(11):eaao3170. doi: 10.1126/sciadv.aao3170. eCollection 2017 Nov.

Stitching h-BN by atomic layer deposition of LiF as a stable interface for lithium metal anode.

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Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA.
Bosch Research and Technology Center North America, 4005 Miranda Avenue #200, Palo Alto, CA 94304, USA.
Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025, USA.


Defects are important features in two-dimensional (2D) materials that have a strong influence on their chemical and physical properties. Through the enhanced chemical reactivity at defect sites (point defects, line defects, etc.), one can selectively functionalize 2D materials via chemical reactions and thereby tune their physical properties. We demonstrate the selective atomic layer deposition of LiF on defect sites of h-BN prepared by chemical vapor deposition. The LiF deposits primarily on the line and point defects of h-BN, thereby creating seams that hold the h-BN crystallites together. The chemically and mechanically stable hybrid LiF/h-BN film successfully suppresses lithium dendrite formation during both the initial electrochemical deposition onto a copper foil and the subsequent cycling. The protected lithium electrodes exhibit good cycling behavior with more than 300 cycles at relatively high coulombic efficiency (>95%) in an additive-free carbonate electrolyte.

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