Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films

Ming-Cheng Kao; Hone-Zern Chen; San-Lin Young; Kai-Huang Chen; Jung-Lung Chiang; Jen-Bin Shi

doi:10.3390/ma10111327

Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films

Materials (Basel). 2017 Nov 20;10(11):1327. doi: 10.3390/ma10111327.

Authors

Ming-Cheng Kao¹, Hone-Zern Chen², San-Lin Young³, Kai-Huang Chen⁴, Jung-Lung Chiang⁵, Jen-Bin Shi⁶

Affiliations

¹ Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung 41280, Taiwan. kmc@hust.edu.tw.
² Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung 41280, Taiwan. hzc@hust.edu.tw.
³ Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung 41280, Taiwan. slyoung@hust.edu.tw.
⁴ Department of Electrical Engineering and Computer Science, Tung Fang Design Institute, Kaohsiung 82941, Taiwan. d9131802@gmail.com.
⁵ Department of Mobile Technology, Toko University, Chiayi 61363, Taiwan. cjunglung@gmail.com.
⁶ Department of Electronic Engineering, Feng Chia University, Taichung 40724, Taiwan. jbshi@fcu.edu.tw.

Abstract

Bi_0.8Pr_0.2Fe_0.95Mn_0.05O₃/Bi_3.96Gd_0.04Ti_2.95W_0.05O₁₂ (BPFMO/BGTWO) bilayer thin films with Multiferroic/Ferroelectric (MF/FE) structures were deposited onto Pt(111)/Ti/SiO₂/Si(100) substrates by using the sol-gel method with rapid thermal annealing. The BPFMO/BGTWO thin films exhibited well-saturated ferromagnetic and ferroelectric hysteresis loops because of the electro-magnetic coupling induced by the MF/FE structure. The remnant magnetization (2Mr) and remnant polarization (2Pr) were 4.6 emu/cm³ and 62 μC/cm², respectively. Moreover, the bipolar I-V switching curves of BPFMO/BGTWO bilayer thin films resistive random access memory (RRAM) devices were discussed, and investigated for LRS/HRS.

Keywords: RRAM; ferroelectric properties; magnetic properties; multiferroic.