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J Microsc. 2017 Dec;268(3):313-320. doi: 10.1111/jmi.12660.

Comparative study of image contrast in scanning electron microscope and helium ion microscope.

Author information

1
School of Physics and CRANN & AMBER, Trinity College Dublin, Dublin, Republic of Ireland.
2
Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing, China.
3
School of Material Science and Engineering, Nanchang University, Nanchang, Jiangxi, China.
4
Department of Materials Science and Engineering, University of Sheffield, Sheffield, U.K.

Abstract

Images of Ga+ -implanted amorphous silicon layers in a 110 n-type silicon substrate have been collected by a range of detectors in a scanning electron microscope and a helium ion microscope. The effects of the implantation dose and imaging parameters (beam energy, dwell time, etc.) on the image contrast were investigated. We demonstrate a similar relationship for both the helium ion microscope Everhart-Thornley and scanning electron microscope Inlens detectors between the contrast of the images and the Ga+ density and imaging parameters. These results also show that dynamic charging effects have a significant impact on the quantification of the helium ion microscope and scanning electron microscope contrast.

KEYWORDS:

Charging effect; contrast reversal; helium ion microscope; scanning electron microscope; secondary electrons

PMID:
29154504
DOI:
10.1111/jmi.12660
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