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J Microsc. 2017 Dec;268(3):313-320. doi: 10.1111/jmi.12660.

Comparative study of image contrast in scanning electron microscope and helium ion microscope.

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School of Physics and CRANN & AMBER, Trinity College Dublin, Dublin, Republic of Ireland.
Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing, China.
School of Material Science and Engineering, Nanchang University, Nanchang, Jiangxi, China.
Department of Materials Science and Engineering, University of Sheffield, Sheffield, U.K.


Images of Ga+ -implanted amorphous silicon layers in a 110 n-type silicon substrate have been collected by a range of detectors in a scanning electron microscope and a helium ion microscope. The effects of the implantation dose and imaging parameters (beam energy, dwell time, etc.) on the image contrast were investigated. We demonstrate a similar relationship for both the helium ion microscope Everhart-Thornley and scanning electron microscope Inlens detectors between the contrast of the images and the Ga+ density and imaging parameters. These results also show that dynamic charging effects have a significant impact on the quantification of the helium ion microscope and scanning electron microscope contrast.


Charging effect; contrast reversal; helium ion microscope; scanning electron microscope; secondary electrons

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