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Nat Commun. 2017 Nov 16;8(1):1551. doi: 10.1038/s41467-017-01748-1.

Giant magnetic splitting inducing near-unity valley polarization in van der Waals heterostructures.

Author information

1
Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93040, Regensburg, Germany. philipp.nagler@ur.de.
2
High Field Magnet Laboratory (HFML-EMFL), Radboud University, 6525 ED, Nijmegen, The Netherlands.
3
Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93040, Regensburg, Germany.
4
Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93040, Regensburg, Germany. tobias.korn@ur.de.

Abstract

Monolayers of semiconducting transition metal dichalcogenides exhibit intriguing fundamental physics of strongly coupled spin and valley degrees of freedom for charge carriers. While the possibility of exploiting these properties for information processing stimulated concerted research activities towards the concept of valleytronics, maintaining control over spin-valley polarization proved challenging in individual monolayers. A promising alternative route explores type II band alignment in artificial van der Waals heterostructures. The resulting formation of interlayer excitons combines the advantages of long carrier lifetimes and spin-valley locking. Here, we demonstrate artificial design of a two-dimensional heterostructure enabling intervalley transitions that are not accessible in monolayer systems. The resulting giant effective g factor of -15 for interlayer excitons induces near-unity valley polarization via valley-selective energetic splitting in high magnetic fields, even after nonselective excitation. Our results highlight the potential to deterministically engineer novel valley properties in van der Waals heterostructures using crystallographic alignment.

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