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Nano Lett. 2017 Dec 13;17(12):7796-7802. doi: 10.1021/acs.nanolett.7b04008. Epub 2017 Nov 8.

Voltage Drop in a Ferroelectric Single Layer Capacitor by Retarded Domain Nucleation.

Author information

1
Department of Materials Science & Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University , Seoul 151-744, Republic of Korea.
2
NaMLab gGmbH/TU Dresden, Noethnitzer Strasse 64, 01187 Dresden, Germany.

Abstract

Ferroelectric (FE) capacitor is a critical electric component in microelectronic devices. Among many of its intriguing properties, the recent finding of voltage drop (V-drop) across the FE capacitor while the positive charges flow in is especially eye-catching. This finding was claimed to be direct evidence that the FE capacitor is in negative capacitance (NC) state, which must be useful for (infinitely) high capacitance and ultralow voltage operation of field-effect transistors. Nonetheless, the NC state corresponds to the maximum energy state of the FE material, so it has been widely accepted in the community that the material alleviates that state by forming ferroelectric domains. This work reports a similar V-drop effect from the 150 nm thick epitaxial BaTiO3 ferroelectric thin film, but the interpretation was completely disparate; the V-drop can be precisely simulated by the reverse domain nucleation and propagation of which charge effect cannot be fully compensated for by the supplied charge from the external charge source. The disappearance of the V-drop effect was also observed by repeated FE switching only up to 10 cycles, which can hardly be explained by the involvement of the NC effect. The retained reverse domain nuclei even after the subsequent poling can explain such behavior.

KEYWORDS:

Ferroelectric thin film; charge accumulation; domain switching; negative capacitance; voltage drop

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