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ACS Appl Mater Interfaces. 2017 Nov 22;9(46):40420-40427. doi: 10.1021/acsami.7b11191. Epub 2017 Nov 8.

Analog Synaptic Behavior of a Silicon Nitride Memristor.

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Inter-University Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University , Seoul 08826, South Korea.
Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin , Austin, Texas 78758, United States.


In this paper, we present a synapse function using analog resistive-switching behaviors in a SiNx-based memristor with a complementary metal-oxide-semiconductor compatibility and expandability to three-dimensional crossbar array architecture. A progressive conductance change is attainable as a result of the gradual growth and dissolution of the conducting path, and the series resistance of the AlOy layer in the Ni/SiNx/AlOy/TiN memristor device enhances analog switching performance by reducing current overshoot. A continuous and smooth gradual reset switching transition can be observed with a compliance current limit (>100 μA), and is highly suitable for demonstrating synaptic characteristics. Long-term potentiation and long-term depression are obtained by means of identical pulse responses. Moreover, symmetric and linear synaptic behaviors are significantly improved by optimizing pulse response conditions, which is verified by a neural network simulation. Finally, we display the spike-timing-dependent plasticity with the multipulse scheme. This work provides a possible way to mimic biological synapse function for energy-efficient neuromorphic systems by using a conventional passive SiNx layer as an active dielectric.


analog resistive switching; memristor; silicon nitride; spike-timing-dependent plasticity; synapse


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