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Nanotechnology. 2017 Dec 8;28(49):495705. doi: 10.1088/1361-6528/aa96e6.

Graphene enhanced field emission from InP nanocrystals.

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Physics Department 'E. R. Caianiello', University of Salerno, via Giovanni Paolo II, I-84084, Fisciano, Italy.


We report the observation of field emission (FE) from InP nanocrystals (NCs) epitaxially grown on an array of p-Si nanotips. We prove that FE can be enhanced by covering the InP NCs with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the FE by Fowler-Nordheim theory and find that the field enhancement factor increases monotonically with the spacing between the anode and the cathode. We also show that InP/p-Si junction has a rectifying behavior, while graphene on InP creates an ohmic contact. Understanding the fundamentals of such nanojunctions is key for applications in nanoelectronics.


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