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Sci Rep. 2017 Oct 17;7(1):13376. doi: 10.1038/s41598-017-13715-3.

Radiation Resistance of Silicon Carbide Schottky Diode Detectors in D-T Fusion Neutron Detection.

Liu L1,2, Liu A3, Bai S3, Lv L4, Jin P5, Ouyang X6,7,8.

Author information

1
School of Nuclear Science and Technology, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, 710049, China. 13619269436@163.com.
2
State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an, 710024, China. 13619269436@163.com.
3
Nanjing Electronic Devices Institute, Building 03, No.8 Xingwen Road, Nanjing, 210016, China.
4
School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710071, China.
5
State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an, 710024, China.
6
School of Nuclear Science and Technology, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, 710049, China. oyxp2003@aliyun.com.
7
State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an, 710024, China. oyxp2003@aliyun.com.
8
Shaanxi Engineering Research Center for Pulse-Neutron Source and its Application, Xijing University, Xi'an, 710123, China. oyxp2003@aliyun.com.

Abstract

Silicon carbide (SiC) is a wide band-gap semiconductor material with many excellent properties, showing great potential in fusion neutron detection. The radiation resistance of 4H-SiC Schottky diode detectors was studied experimentally by carefully analyzing the detectors' properties before and after deuterium-tritium fusion neutron irradiation with the total fluence of 1.31 × 1014 n/cm2 and 7.29 × 1014 n/cm2 at room temperature. Significant degradation has been observed after neutron irradiation: reverse current increased greatly, over three to thirty fold; Schottky junction was broken down; significant lattice damage was observed at low temperature photoluminescence measurements; the peaks of alpha particle response spectra shifted to lower channels and became wider; the charge collection efficiency (CCE) decreased by about 7.0% and 22.5% at 300 V with neutron irradiation fluence of 1.31 × 1014 n/cm2 and 7.29 × 1014 n/cm2, respectively. Although the degradation exists, the SiC detectors successfully survive intense neutron radiation and show better radiation resistance than silicon detectors.

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