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Sci Rep. 2017 Sep 22;7(1):12157. doi: 10.1038/s41598-017-09380-1.

Ohmic contact between iridium film and hydrogen-terminated single crystal diamond.

Author information

1
Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xi'an, &10049, PR China.
2
Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xi'an, &10049, PR China. wei_wang2014@mail.xjtu.edu.cn.
3
Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xi'an, &10049, PR China. hxwangcn@mail.xjtu.edu.cn.

Abstract

Investigation of ohmic contact between iridium (Ir) film and hydrogen-terminated single crystal diamond has been carried out with annealing temperature from 300 to 600 °C in argon (Ar) and hydrogen ambient. Electrodes were deposited on hydrogen-terminated single crystal diamond by electron beam evaporation technique, and specific contact resistivity has been measured by transmission line model. The interface between Ir film and hydrogen-terminated single crystal diamond was characterized by transmission electron microscopy and energy dispersive X-ray spectroscopy. Theoretical calculation value of barrier height between Ir film and hydrogen-terminated single crystal diamond was around -1.1 eV. All results indicate that an excellent ohmic contact could be formed between Ir film and hydrogen-terminated single diamond.

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