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Nat Commun. 2017 Sep 21;8(1):633. doi: 10.1038/s41467-017-00734-x.

Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons.

Author information

1
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.
2
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
3
Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, Dübendorf, CH-8600, Switzerland.
4
Department of Physics, UC Berkeley, Berkeley, CA, 94720, USA.
5
Flash PA Team, Semiconductor Memory Business, Samsung Electronics Co. Ltd., Gyeonggi-do, Korea.
6
Max Planck Institute for Polymer Research, Ackermannweg 10, Mainz, 55128, Germany.
7
Center for Advancing Electronics Dresden, Department of Chemistry and Food Chemistry, TU Dresden, Mommsenstrasse 4, Dresden, 01062, Germany.
8
Department of Chemistry, UC Berkeley, Berkeley, CA, 94720, USA.
9
Kavli Energy NanoSciences Institute at the University of California, Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
10
Department of Chemistry and Biochemistry, University of Bern, Freiestrasse 3, CH-3012, Bern, Switzerland.
11
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA. jbokor@eecs.berkeley.edu.
12
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA. jbokor@eecs.berkeley.edu.

Abstract

Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene nanoribbons have prevented the fabrication of devices with the desired performance and switching behavior. Here, by fabricating short channel (L ch ~ 20 nm) devices with a thin, high-κ gate dielectric and a 9-atom wide (0.95 nm) armchair graphene nanoribbon as the channel material, we demonstrate field-effect transistors with high on-current (I on > 1 μA at V d = -1 V) and high I on /I off ~ 105 at room temperature. We find that the performance of these devices is limited by tunneling through the Schottky barrier at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high-performance short-channel field-effect transistors with bottom-up synthesized armchair graphene nanoribbons.Graphene nanoribbons show promise for high-performance field-effect transistors, however they often suffer from short lengths and wide band gaps. Here, the authors use a bottom-up synthesis approach to fabricate 9- and 13-atom wide ribbons, enabling short-channel transistors with 105 on-off current ratio.

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