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Nano Lett. 2017 Oct 11;17(10):6090-6096. doi: 10.1021/acs.nanolett.7b02604. Epub 2017 Sep 22.

Growth of InAs Wurtzite Nanocrosses from Hexagonal and Cubic Basis.

Author information

1
Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen , 2100 Copenhagen, Denmark.
2
Department of Wind Energy, Technical University of Denmark , DTU Risø Campus, 4000 Roskilde, Denmark.

Abstract

Epitaxially connected nanowires allow for the design of electron transport experiments and applications beyond the standard two terminal device geometries. In this Letter, we present growth methods of three distinct types of wurtzite structured InAs nanocrosses via the vapor-liquid-solid mechanism. Two methods use conventional wurtzite nanowire arrays as a 6-fold hexagonal basis for growing single crystal wurtzite nanocrosses. A third method uses the 2-fold cubic symmetry of (100) substrates to form well-defined coherent inclusions of zinc blende in the center of the nanocrosses. We show that all three types of nanocrosses can be transferred undamaged to arbitrary substrates, which allows for structural, compositional, and electrical characterization. We further demonstrate the potential for synthesis of as-grown nanowire networks and for using nanowires as shadow masks for in situ fabricated junctions in radial nanowire heterostructures.

KEYWORDS:

Kinked nanowires; branched nanowires; nanowire junctions; nanowire networks; nanowire shadow mask

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