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Sci Rep. 2017 Sep 8;7(1):10980. doi: 10.1038/s41598-017-10777-1.

Rapid synthesis and decoration of reduced graphene oxide with gold nanoparticles by thermostable peptides for memory device and photothermal applications.

Author information

1
Key Laboratory of Biopesticide and Chemical Biology, College of Life Sciences, Fujian Agriculture and Forestry University, Fuzhou, Fujian province, 350002, PR China.
2
Department of Chemical Engineering, Konkuk University, Seoul, 05029, Republic of Korea.
3
Department of Mechanical Engineering, Konkuk University, Seoul, 05029, Republic of Korea.
4
Materials & Surface Science, Institute Bernal Institute, University of Limerick, Limerick, Ireland.
5
Department of Chemical Engineering, Konkuk University, Seoul, 05029, Republic of Korea. jkrhee@konkuk.ac.kr.
6
Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea. yckang@korea.ac.kr.
7
Key Laboratory of Biopesticide and Chemical Biology, College of Life Sciences, Fujian Agriculture and Forestry University, Fuzhou, Fujian province, 350002, PR China. zliaoyuan@126.com.
8
Department of Chemical Engineering, Konkuk University, Seoul, 05029, Republic of Korea. zliaoyuan@126.com.

Abstract

This article presents novel, rapid, and environmentally benign synthesis method for one-step reduction and decoration of graphene oxide with gold nanoparticles (NAuNPs) by using thermostable antimicrobial nisin peptides to form a gold-nanoparticles-reduced graphene oxide (NAu-rGO) nanocomposite. The formed composite material was characterized by UV/Vis spectroscopy, X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, and high-resolution transmission electron microscopy (HR-TEM). HR-TEM analysis revealed the formation of spherical AuNPs of 5-30 nm in size on reduced graphene oxide (rGO) nanosheets. A non-volatile-memory device was prepared based on a solution-processed ZnO thin-film transistor fabricated by inserting the NAu-rGO nanocomposite in the gate dielectric stack as a charge trapping medium. The transfer characteristic of the ZnO thin-film transistor memory device showed large clockwise hysteresis behaviour because of charge carrier trapping in the NAu-rGO nanocomposite. Under positive and negative bias conditions, clear positive and negative threshold voltage shifts occurred, which were attributed to charge carrier trapping and de-trapping in the ZnO/NAu-rGO/SiO2 structure. Also, the photothermal effect of the NAu-rGO nanocomposites on MCF7 breast cancer cells caused inhibition of ~80% cells after irradiation with infrared light (0.5 W cm-2) for 5 min.

PMID:
28887565
PMCID:
PMC5591228
DOI:
10.1038/s41598-017-10777-1
[Indexed for MEDLINE]
Free PMC Article

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