Thermoresponsive Memory Behavior in Metallosupramolecular Polymer-Based Ternary Memory Devices

Thermal-sensitive materials, such as metallosupramolecular polymers, have been integrated into devices for a broad range of applications. However, the role of these materials is limited to temperature sensing and the lack of a memory function. Herein, we present novel [PolyCo-L1_xL2_y-PF₆]-based organic resistive memories (ORMs) possessing both a thermal response and ternary memory behavior with three electrical resistance states [high (HRS), intermediate (IRS), and low (LRS)]. Furthermore, the thermal behavior can be memorized by the Al/[PolyCoL1_xL2_y-PF₆]/indium-tin oxide devices. Heating and cooling the devices at a LRS results in a switch from the LRS to a HRS and further to a LRS, indicating that the thermal behavior can be efficiently memorized. Following the heating and cooling process, devices at a HRS retain their ternary memory behavior, while an unstable resistance variation behavior is observed at the IRS. We propose a possible mechanism for the thermoresponsive memory behavior, and this finding provides a guide for the design of future thermoresponsive ORMs.