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Materials (Basel). 2016 Aug 13;9(8). pii: E695. doi: 10.3390/ma9080695.

Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition.

Author information

1
Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UK. Jingjin.wu@liverpool.ac.uk.
2
Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UK. Yinchao.zhao@liverpool.ac.uk.
3
Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China. cezhou.zhao@xjtlu.edu.cn.
4
Department of Chemistry, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China. Li.Yang@xjtlu.edu.cn.
5
Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UK. qifeng@liverpool.ac.uk.
6
Department of Chemistry, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China. Qian.Zhang@xjtlu.edu.cn.
7
Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UK. J.S.Smith@liverpool.ac.uk.
8
Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, China. ymzhao2009@sinano.ac.cn.
9
University of Chinese Academy of Sciences, Beijing 100049, China. ymzhao2009@sinano.ac.cn.

Abstract

The 4 at. % zirconium-doped zinc oxide (ZnO:Zr) films grown by atomic layer deposition (ALD) were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA) treated ZnO:Zr films have been evaluated to find out the stability limit. It was found that the grain size increased at 350 °C and decreased between 350 and 850 °C, while creeping up again at 850 °C. UV-vis characterization shows that the optical band gap shifts towards larger wavelengths. The Hall measurement shows that the resistivity almost keeps constant at low annealing temperatures, and increases rapidly after treatment at 750 °C due to the effect of both the carrier concentration and the Hall mobility. The best annealing temperature is found in the range of 350-550 °C. The ZnO:Zr film-coated glass substrates show good optical and electrical performance up to 550 °C during superstrate thin film solar cell deposition.

KEYWORDS:

Zr-doped ZnO; atomic layer deposition; rapid thermal annealing; red-shift

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