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Materials (Basel). 2017 Jun 3;10(6). pii: E612. doi: 10.3390/ma10060612.

Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors.

Author information

1
School of Electrical and Electronic Engineering, Chung-Ang University, Seoul 06980, Korea. heojs38@gmail.com.
2
SKKU Advanced Institute of Nanotechnology (SAINT) and School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea. oyenice@skku.edu.
3
School of Electrical and Electronic Engineering, Chung-Ang University, Seoul 06980, Korea. jzw0108@nate.com.
4
School of Electrical and Electronic Engineering, Chung-Ang University, Seoul 06980, Korea. uangelion@gmail.com.
5
School of Electrical and Electronic Engineering, Chung-Ang University, Seoul 06980, Korea. hohyun@cau.ac.kr.
6
SKKU Advanced Institute of Nanotechnology (SAINT) and School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea. yhkim76@skku.edu.
7
School of Electrical and Electronic Engineering, Chung-Ang University, Seoul 06980, Korea. skpark@cau.ac.kr.

Abstract

In this paper, we demonstrate high mobility solution-processed metal-oxide thin-film transistors (TFTs) by using a high-frequency-stable ionic-type hybrid gate dielectric (HGD). The HGD gate dielectric, a blend of sol-gel aluminum oxide (AlOx) and poly(4-vinylphenol) (PVP), exhibited high dielectric constant (ε~8.15) and high-frequency-stable characteristics (1 MHz). Using the ionic-type HGD as a gate dielectric layer, an minimal electron-double-layer (EDL) can be formed at the gate dielectric/InOx interface, enhancing the field-effect mobility of the TFTs. Particularly, using the ionic-type HGD gate dielectrics annealed at 350 °C, InOx TFTs having an average field-effect mobility of 16.1 cm²/Vs were achieved (maximum mobility of 24 cm²/Vs). Furthermore, the ionic-type HGD gate dielectrics can be processed at a low temperature of 150 °C, which may enable their applications in low-thermal-budget plastic and elastomeric substrates. In addition, we systematically studied the operational stability of the InOx TFTs using the HGD gate dielectric, and it was observed that the HGD gate dielectric effectively suppressed the negative threshold voltage shift during the negative-illumination-bias stress possibly owing to the recombination of hole carriers injected in the gate dielectric with the negatively charged ionic species in the HGD gate dielectric.

KEYWORDS:

high mobility; hybrid gate dielectric; low temperature solution-process; metal-oxide semiconductors; thin-film transistors

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