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Nano Lett. 2017 Aug 9;17(8):5008-5011. doi: 10.1021/acs.nanolett.7b02186. Epub 2017 Jul 7.

Gate-Defined One-Dimensional Channel and Broken Symmetry States in MoS2 van der Waals Heterostructures.

Author information

1
Solid State Physics Laboratory, ETH Zürich , CH-8093 Zürich, Switzerland.
2
National Institute for Material Science , 1-1 Namiki, Tsukuba 305-0044, Japan.
3
National Graphene Institute, University of Manchester , Manchester M13 9PL, United Kingdom.

Abstract

We have realized encapsulated trilayer MoS2 devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000 cm2/(V s) at a density of 3 × 1012 cm-2 at a temperature of 1.9 K. Shubnikov-de Haas oscillations start at magnetic fields as low as 0.9 T. The observed 3-fold Landau level degeneracy can be understood based on the valley Zeeman effect. Negatively biased split gate electrodes allow us to form a channel that can be completely pinched off for sufficiently large gate voltages. The measured conductance displays plateau-like features.

KEYWORDS:

MoS2; Shubnikov−de Haas oscillations; gate-defined nanostructures; valley Zeeman effect; van der Waals heterostructures

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