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Nano Lett. 2017 Aug 9;17(8):4619-4623. doi: 10.1021/acs.nanolett.7b01029. Epub 2017 Jul 3.

Epitaxial Growth and Band Structure of Te Film on Graphene.

Huang X1,2, Guan J1,2, Lin Z1, Liu B1,2, Xing S1, Wang W1, Guo J1,2,3.

Author information

1
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.
2
School of Physical Sciences, University of the Chinese Academy of Sciences , Beijing 100190, China.
3
Collaborative Innovation Center of Quantum Matter , Beijing 100871, China.

Abstract

Tellurium (Te) films with monolayer and few-layer thickness are obtained by molecular beam epitaxy on a graphene/6H-SiC(0001) substrate and investigated by in situ scanning tunneling microscopy and spectroscopy (STM/STS). We reveal that the Te films are composed of parallel-arranged helical Te chains flat-lying on the graphene surface, exposing the (1 × 1) facet of (101̅0) of the bulk crystal. The band gap of Te films increases monotonically with decreasing thickness, reaching the near-infrared band for the monolayer Te. An explicit band bending at the edge between the monolayer Te and graphene substrate is visualized. With the thickness controlled in the atomic scale, Te films show potential applications of electronics and optoelectronics.

KEYWORDS:

Tellurium; helical chains; molecular beam epitaxy; optoelectronics; scanning tunneling microscopy; semiconducting band gap

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