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Nanomaterials (Basel). 2017 Jun 27;7(7). pii: E158. doi: 10.3390/nano7070158.

I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor.

Author information

1
Dipartimento di Fisica "E. R. Caianiello", Università di Salerno, via Giovanni Paolo II 132, 84084 Fisciano, Italy. giluongo@unisa.it.
2
CNR-SPIN Salerno, via Giovanni Paolo II 132, 84084 Fisciano, Italy. giluongo@unisa.it.
3
CNR-SPIN Salerno, via Giovanni Paolo II 132, 84084 Fisciano, Italy. filippo.giubileo@spin.cnr.it.
4
Dipartimento di Fisica "E. R. Caianiello", Università di Salerno, via Giovanni Paolo II 132, 84084 Fisciano, Italy. genoveseluca89@gmail.com.
5
Dipartimento di Fisica "E. R. Caianiello", Università di Salerno, via Giovanni Paolo II 132, 84084 Fisciano, Italy. liemmo@unisa.it.
6
CNR-SPIN Salerno, via Giovanni Paolo II 132, 84084 Fisciano, Italy. nadia.martucciello@spin.cnr.it.
7
Dipartimento di Fisica "E. R. Caianiello", Università di Salerno, via Giovanni Paolo II 132, 84084 Fisciano, Italy. adibartolomeo@unisa.it.
8
CNR-SPIN Salerno, via Giovanni Paolo II 132, 84084 Fisciano, Italy. adibartolomeo@unisa.it.

Abstract

We study the effect of temperature and light on the I-V and C-V characteristics of a graphene/silicon Schottky diode. The device exhibits a reverse-bias photocurrent exceeding the forward current and achieves a photoresponsivity as high as 2.5 A / W . We show that the enhanced photocurrent is due to photo-generated carriers injected in the graphene/Si junction from the parasitic graphene/SiO₂/Si capacitor connected in parallel to the diode. The same mechanism can occur with thermally generated carriers, which contribute to the high leakage current often observed in graphene/Si junctions.

KEYWORDS:

MOS capacitor; Schottky barrier; graphene; photocurrent; photodiode

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