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Sci Adv. 2017 Jun 9;3(6):e1700121. doi: 10.1126/sciadv.1700121. eCollection 2017 Jun.

Flexible ferroelectric element based on van der Waals heteroepitaxy.

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Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, Xiangtan University, Hunan 411105, China.
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan.
Institute of Physics, Academia Sinica, Taipei 11529, Taiwan.
Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan.
Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
Department of Physics, National Cheng Kung University, Tainan, Taiwan.
Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan.


We present a promising technology for nonvolatile flexible electronic devices: A direct fabrication of epitaxial lead zirconium titanate (PZT) on flexible mica substrate via van der Waals epitaxy. These single-crystalline flexible ferroelectric PZT films not only retain their performance, reliability, and thermal stability comparable to those on rigid counterparts in tests of nonvolatile memory elements but also exhibit remarkable mechanical properties with robust operation in bent states (bending radii down to 2.5 mm) and cycling tests (1000 times). This study marks the technological advancement toward realizing much-awaited flexible yet single-crystalline nonvolatile electronic devices for the design and development of flexible, lightweight, and next-generation smart devices with potential applications in electronics, robotics, automotive, health care, industrial, and military systems.


PZT; epitaxial thin films; ferroelectric materials; flexible memory; van der Waals heteroepitaxy

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