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Adv Mater. 2017 Aug;29(31). doi: 10.1002/adma.201701822. Epub 2017 Jun 19.

Thread-Like CMOS Logic Circuits Enabled by Reel-Processed Single-Walled Carbon Nanotube Transistors via Selective Doping.

Author information

1
School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06980, South Korea.
2
Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 08826, South Korea.
3
Department of Chemistry and Science, Textile Engineering, North Carolina State University, Raleigh, NC, 27606, USA.
4
Department of Chemistry, Chung-Ang University, Seoul, 06980, South Korea.
5
SKKU Advanced Institute of Nanotechnology (SAINT) and School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, South Korea.

Abstract

The realization of large-area electronics with full integration of 1D thread-like devices may open up a new era for ultraflexible and human adaptable electronic systems because of their potential advantages in demonstrating scalable complex circuitry by a simply integrated weaving technology. More importantly, the thread-like fiber electronic devices can be achieved using a simple reel-to-reel process, which is strongly required for low-cost and scalable manufacturing technology. Here, high-performance reel-processed complementary metal-oxide-semiconductor (CMOS) integrated circuits are reported on 1D fiber substrates by using selectively chemical-doped single-walled carbon nanotube (SWCNT) transistors. With the introduction of selective n-type doping and a nonrelief photochemical patterning process, p- and n-type SWCNT transistors are successfully implemented on cylindrical fiber substrates under air ambient, enabling high-performance and reliable thread-like CMOS inverter circuits. In addition, it is noteworthy that the optimized reel-coating process can facilitate improvement in the arrangement of SWCNTs, building uniformly well-aligned SWCNT channels, and enhancement of the electrical performance of the devices. The p- and n-type SWCNT transistors exhibit field-effect mobility of 4.03 and 2.15 cm2 V-1 s-1 , respectively, with relatively narrow distribution. Moreover, the SWCNT CMOS inverter circuits demonstrate a gain of 6.76 and relatively good dynamic operation at a supply voltage of 5.0 V.

KEYWORDS:

complelentary metal-oxide-semiconductor (CMOS) integrated circuits; deep UV irradiation; single-walled carbon nanotubes (SWCNTs); thread-like fiber electronic devices; transistors

PMID:
28628230
DOI:
10.1002/adma.201701822

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