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Adv Mater. 2017 Aug;29(31). doi: 10.1002/adma.201701822. Epub 2017 Jun 19.

Thread-Like CMOS Logic Circuits Enabled by Reel-Processed Single-Walled Carbon Nanotube Transistors via Selective Doping.

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School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06980, South Korea.
Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 08826, South Korea.
Department of Chemistry and Science, Textile Engineering, North Carolina State University, Raleigh, NC, 27606, USA.
Department of Chemistry, Chung-Ang University, Seoul, 06980, South Korea.
SKKU Advanced Institute of Nanotechnology (SAINT) and School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, South Korea.


The realization of large-area electronics with full integration of 1D thread-like devices may open up a new era for ultraflexible and human adaptable electronic systems because of their potential advantages in demonstrating scalable complex circuitry by a simply integrated weaving technology. More importantly, the thread-like fiber electronic devices can be achieved using a simple reel-to-reel process, which is strongly required for low-cost and scalable manufacturing technology. Here, high-performance reel-processed complementary metal-oxide-semiconductor (CMOS) integrated circuits are reported on 1D fiber substrates by using selectively chemical-doped single-walled carbon nanotube (SWCNT) transistors. With the introduction of selective n-type doping and a nonrelief photochemical patterning process, p- and n-type SWCNT transistors are successfully implemented on cylindrical fiber substrates under air ambient, enabling high-performance and reliable thread-like CMOS inverter circuits. In addition, it is noteworthy that the optimized reel-coating process can facilitate improvement in the arrangement of SWCNTs, building uniformly well-aligned SWCNT channels, and enhancement of the electrical performance of the devices. The p- and n-type SWCNT transistors exhibit field-effect mobility of 4.03 and 2.15 cm2 V-1 s-1 , respectively, with relatively narrow distribution. Moreover, the SWCNT CMOS inverter circuits demonstrate a gain of 6.76 and relatively good dynamic operation at a supply voltage of 5.0 V.


complelentary metal-oxide-semiconductor (CMOS) integrated circuits; deep UV irradiation; single-walled carbon nanotubes (SWCNTs); thread-like fiber electronic devices; transistors


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