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Nat Commun. 2017 Jun 1;8:15722. doi: 10.1038/ncomms15722.

Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires.

Author information

1
Center for Spintronics, Post-Si Semiconductor Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 02792, Korea.
2
Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea.
3
Department of Nanomaterials Science and Engineering, Korea University of Science and Technology, Daejeon 34113, Korea.
4
KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Korea.
5
Naval Research Laboratory, Washington, District Of Columbia 20375, USA.

Abstract

Semiconductor spintronics is an alternative to conventional electronics that offers devices with high performance, low power and multiple functionality. Although a large number of devices with mesoscopic dimensions have been successfully demonstrated at low temperatures for decades, room-temperature operation still needs to go further. Here we study spin injection in single-crystal gallium nitride nanowires and report robust spin accumulation at room temperature with enhanced spin injection polarization of 9%. A large Overhauser coupling between the electron spin accumulation and the lattice nuclei is observed. Finally, our single-crystal gallium nitride samples have a trigonal cross-section defined by the (001), () and () planes. Using the Hanle effect, we show that the spin accumulation is significantly different for injection across the (001) and () (or ()) planes. This provides a technique for increasing room temperature spin injection in mesoscopic systems.

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