Send to

Choose Destination
Nat Commun. 2017 May 30;8:15579. doi: 10.1038/ncomms15579.

Coherent control of the silicon-vacancy spin in diamond.

Author information

Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK.
Fachrichtung 7.2 (Experimentalphysik), Universität des Saarlandes, Campus E2.6, 66123 Saarbrücken, Germany.
Element Six Ltd., Global Innovation Centre, Fermi Avenue, Harwell Oxford, Didcot OX11 0QR, UK.


Spin impurities in diamond have emerged as a promising building block in a wide range of solid-state-based quantum technologies. The negatively charged silicon-vacancy centre combines the advantages of its high-quality photonic properties with a ground-state electronic spin, which can be read out optically. However, for this spin to be operational as a quantum bit, full quantum control is essential. Here we report the measurement of optically detected magnetic resonance and the demonstration of coherent control of a single silicon-vacancy centre spin with a microwave field. Using Ramsey interferometry, we directly measure a spin coherence time, T2*, of 115±9 ns at 3.6 K. The temperature dependence of coherence times indicates that dephasing and decay of the spin arise from single-phonon-mediated excitation between orbital branches of the ground state. Our results enable the silicon-vacancy centre spin to become a controllable resource to establish spin-photon quantum interfaces.

Supplemental Content

Full text links

Icon for Nature Publishing Group Icon for PubMed Central
Loading ...
Support Center