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Nat Commun. 2017 May 30;8:15579. doi: 10.1038/ncomms15579.

Coherent control of the silicon-vacancy spin in diamond.

Author information

1
Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK.
2
Fachrichtung 7.2 (Experimentalphysik), Universität des Saarlandes, Campus E2.6, 66123 Saarbrücken, Germany.
3
Element Six Ltd., Global Innovation Centre, Fermi Avenue, Harwell Oxford, Didcot OX11 0QR, UK.

Abstract

Spin impurities in diamond have emerged as a promising building block in a wide range of solid-state-based quantum technologies. The negatively charged silicon-vacancy centre combines the advantages of its high-quality photonic properties with a ground-state electronic spin, which can be read out optically. However, for this spin to be operational as a quantum bit, full quantum control is essential. Here we report the measurement of optically detected magnetic resonance and the demonstration of coherent control of a single silicon-vacancy centre spin with a microwave field. Using Ramsey interferometry, we directly measure a spin coherence time, T2*, of 115±9 ns at 3.6 K. The temperature dependence of coherence times indicates that dephasing and decay of the spin arise from single-phonon-mediated excitation between orbital branches of the ground state. Our results enable the silicon-vacancy centre spin to become a controllable resource to establish spin-photon quantum interfaces.

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