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Nano Lett. 2017 Jun 14;17(6):3629-3633. doi: 10.1021/acs.nanolett.7b00803. Epub 2017 Jun 1.

Ten-Fold Enhancement of InAs Nanowire Photoluminescence Emission with an InP Passivation Layer.

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Department of Electronic and Electrical Engineering, University College London , London WC1E 7JE, United Kingdom.
Department of Physics, University of Warwick , Coventry CV4 7AL, United Kingdom.
Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen , Universitetsparken 5, 2100 Copenhagen, Denmark.


In this Letter, we demonstrate that a significant improvement of optical performance of InAs nanowires can be achieved by capping the core InAs nanowires with a thin InP shell, which successfully passivates the surface states reducing the rate of nonradiative recombination. The improvements have been confirmed by detailed photoluminescence measurements, which showed up to a 10-fold increase in the intensity of room-temperature photoluminescence from the capped InAs/InP nanowires compared to the sample with core-only InAs nanowires. Moreover, the nanowires exhibit a high stability of total photoluminescence emission strength across temperature range from 10 to 300 K as a result of strong quantum confinement. These findings could be the key to successful implementation of InAs nanowires into optoelectronic devices.


InAs; Nanowires; photoluminescence; self-catalyzed

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