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ACS Appl Mater Interfaces. 2017 Jun 7;9(22):19011-19020. doi: 10.1021/acsami.7b03058. Epub 2017 May 30.

Photoresponsive Transistors Based on a Dual Acceptor-Containing Low-Bandgap Polymer.

Author information

1
SKKU Advanced Institute of Nanotechnology, School of Chemical Engineering, Sungkyunkwan University , 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea.
2
Department of Science Education, Ewha Womans University , 52 Ewhayeodae-gil, Seodaemun-gu, Seoul 03760, Republic of Korea.
3
Department of Chemistry, Korea University , 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
4
Department of Energy Systems Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST) , 333 Techno Jungang-daero, Hyeonpung-myeon, Dalseong-gun, Daegu 42988, Republic of Korea.

Abstract

In this Article, low-bandgap pTTDPP-BT polymers based on electron-accepting pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione (DPP) and benzothiadiazole (BT) and electron-donating thienothiophene (TT) moieties were synthesized. Phototransistors have been fabricated using ambipolar-behaving pTTDPP-BT polymers as active channel materials. The electrical and photoresponsive properties of the pTTDPP-BT phototransistors were strongly dependent on the film annealing temperature. As-spun pTTDPP-BT phototransistors exhibited a low hole mobility of 0.007 cm2/(V·s) and a low electron mobility of 0.005 cm2/(V·s), which resulted in low photocurrent detection due to the limited transport of the charge carriers. Thermal treatment of the polymer thin films led to a significant enhancement in the carrier mobilities (hole and electron mobilities of 0.066 and 0.115 cm2/(V·s), respectively, for 200 °C annealing) and thus significantly improved photoresponsive properties. The 200 °C-annealed phototransistors showed a wide-range wavelength (405-850 nm) of photoresponse, and a high photocurrent/dark-current ratio of 150 with a fast photoswitching speed of less than 100 ms. This work demonstrates that a dual acceptor-containing low band gap polymer can be an important class of material in broadband photoresponsive transistors, and the crystallinity of the semiconducting polymer layer has a significant effect on the photoresponse characteristics.

KEYWORDS:

carrier mobility; low-bandgap polymer; photoresponse; photoswitching; phototransistor

PMID:
28524650
DOI:
10.1021/acsami.7b03058

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