Format

Send to

Choose Destination
Sci Rep. 2017 May 4;7(1):1516. doi: 10.1038/s41598-017-01653-z.

Device performance enhancement via a Si-rich silicon oxynitride buffer layer for the organic photodetecting device.

Author information

1
Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea.
2
Organic Materials Laboratory, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea. kyuskim3@snu.ac.kr.
3
Department of Physics, Chungbuk National University, Cheongju, 361-763, Korea.

Abstract

An advanced organic photodetector (OPD) with a butter layer of Si-rich silicon oxynitride (SiOxNy) was fabricated. The detector structure is as follows: Indium tin oxide (ITO) coated glass substrate/SiOxNy(10 nm)/naphthalene-based donor:C60(1:1)/ITO. Values of x and y in SiOxNy were carefully controlled and the detector performances such as dark current and thermal stability were investigated. When the values of x and y are 0.16 and 0.66, the detector illustrates low dark current as well as excellent thermal stability. In the OPD, silicon oxynitride layer works as electron barrier under reverse bias, leading to the decrease of dark current and increase of detectivity. Since the band gap of silicon oxynitride unlike conventional buffer layers can also be controlled by adjusting x and y values, it can be adapted into various photodiode applications.

Supplemental Content

Full text links

Icon for Nature Publishing Group Icon for PubMed Central
Loading ...
Support Center