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ACS Nano. 2017 Apr 25;11(4):4337-4345. doi: 10.1021/acsnano.7b01547. Epub 2017 Apr 12.

Deterministic Switching of Perpendicular Magnetic Anisotropy by Voltage Control of Spin Reorientation Transition in (Co/Pt)3/Pb(Mg1/3Nb2/3)O3-PbTiO3 Multiferroic Heterostructures.

Author information

1
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China.
2
Department of Electrical and Computer Engineering, Northeastern University , 360 Huntington Avenue, Boston, Massachusetts 02115, United States.
3
Collaborative Innovation Center of High-End Manufacturing Equipment, Xi'an Jiaotong University , Xi'an 710049, China.
4
Department of Chemistry and 4D LABS, Simon Fraser University , Burnaby, British Columbia V5A 1S6, Canada.

Abstract

One of the central challenges in realizing multiferroics-based magnetoelectric memories is to switch perpendicular magnetic anisotropy (PMA) with a control voltage. In this study, we demonstrate electrical flipping of magnetization between the out-of-plane and the in-plane directions in (Co/Pt)3/(011) Pb(Mg1/3Nb2/3)O3-PbTiO3 multiferroic heterostructures through a voltage-controllable spin reorientation transition (SRT). The SRT onset temperature can be dramatically suppressed at least 200 K by applying an electric field, accompanied by a giant electric-field-induced effective magnetic anisotropy field (ΔHeff) up to 1100 Oe at 100 K. In comparison with conventional strain-mediated magnetoelastic coupling that provides a ΔHeff of only 110 Oe, that enormous effective field is mainly related to the interface effect of electric field modification of spin-orbit coupling from Co/Pt interfacial hybridization via strain. Moreover, electric field control of SRT is also achieved at room temperature, resulting in a ΔHeff of nearly 550 Oe. In addition, ferroelastically nonvolatile switching of PMA has been demonstrated in this system. E-field control of PMA and SRT in multiferroic heterostructures not only provides a platform to study strain effect and interfacial effect on magnetic anisotropy of the ultrathin ferromagnetic films but also enables the realization of power efficient PMA magnetoelectric and spintronic devices.

KEYWORDS:

ferromagnetic resonance; magnetoelectric coupling; multiferroic heterostructure; perpendicular magnetic anisotropy; spin reorientation transition; spin−orbit coupling

PMID:
28394574
DOI:
10.1021/acsnano.7b01547

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