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ACS Nano. 2017 Apr 25;11(4):4337-4345. doi: 10.1021/acsnano.7b01547. Epub 2017 Apr 12.

Deterministic Switching of Perpendicular Magnetic Anisotropy by Voltage Control of Spin Reorientation Transition in (Co/Pt)3/Pb(Mg1/3Nb2/3)O3-PbTiO3 Multiferroic Heterostructures.

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Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China.
Department of Electrical and Computer Engineering, Northeastern University , 360 Huntington Avenue, Boston, Massachusetts 02115, United States.
Collaborative Innovation Center of High-End Manufacturing Equipment, Xi'an Jiaotong University , Xi'an 710049, China.
Department of Chemistry and 4D LABS, Simon Fraser University , Burnaby, British Columbia V5A 1S6, Canada.


One of the central challenges in realizing multiferroics-based magnetoelectric memories is to switch perpendicular magnetic anisotropy (PMA) with a control voltage. In this study, we demonstrate electrical flipping of magnetization between the out-of-plane and the in-plane directions in (Co/Pt)3/(011) Pb(Mg1/3Nb2/3)O3-PbTiO3 multiferroic heterostructures through a voltage-controllable spin reorientation transition (SRT). The SRT onset temperature can be dramatically suppressed at least 200 K by applying an electric field, accompanied by a giant electric-field-induced effective magnetic anisotropy field (ΔHeff) up to 1100 Oe at 100 K. In comparison with conventional strain-mediated magnetoelastic coupling that provides a ΔHeff of only 110 Oe, that enormous effective field is mainly related to the interface effect of electric field modification of spin-orbit coupling from Co/Pt interfacial hybridization via strain. Moreover, electric field control of SRT is also achieved at room temperature, resulting in a ΔHeff of nearly 550 Oe. In addition, ferroelastically nonvolatile switching of PMA has been demonstrated in this system. E-field control of PMA and SRT in multiferroic heterostructures not only provides a platform to study strain effect and interfacial effect on magnetic anisotropy of the ultrathin ferromagnetic films but also enables the realization of power efficient PMA magnetoelectric and spintronic devices.


ferromagnetic resonance; magnetoelectric coupling; multiferroic heterostructure; perpendicular magnetic anisotropy; spin reorientation transition; spin−orbit coupling


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