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Nano Lett. 2017 May 10;17(5):3159-3164. doi: 10.1021/acs.nanolett.7b00636. Epub 2017 Apr 13.

Visible Wavelength Color Filters Using Dielectric Subwavelength Gratings for Backside-Illuminated CMOS Image Sensor Technologies.

Author information

1
T. J. Watson Laboratory of Applied Physics, California Institute of Technology , 1200 East California Boulevard, Pasadena, California 91125, United States.
2
Samsung Advanced Institute of Technology, Samsung Electronics , Yeongtong-gu, Suwon-si, Gyeonggi-do 443-803, South Korea.
3
Advanced Image Research Lab, Samsung Electronics , 2 North Lake Avenue, Pasadena, California 91101, United States.

Abstract

We report transmissive color filters based on subwavelength dielectric gratings that can replace conventional dye-based color filters used in backside-illuminated CMOS image sensor (BSI CIS) technologies. The filters are patterned in an 80 nm-thick poly silicon film on a 115 nm-thick SiO2 spacer layer. They are optimized for operating at the primary RGB colors, exhibit peak transmittance of 60-80%, and have an almost insensitive response over a ± 20° angular range. This technology enables shrinking of the pixel sizes down to near a micrometer.

KEYWORDS:

CMOS image sensor; Subwavelength grating; color filters; high-index contrast

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