Format

Send to

Choose Destination
ACS Nano. 2017 Apr 25;11(4):4105-4113. doi: 10.1021/acsnano.7b00798. Epub 2017 Apr 7.

Synthesis, Characterization, and Device Application of Antimony-Substituted Violet Phosphorus: A Layered Material.

Author information

1
Department für Chemie, Technische Universität München , Lichtenbergstrasse 4, 85747 Garching b. München, Germany.
2
Department of Electrical Engineering, University of Southern California , 3710 McClintock Avenue, Los Angeles, California 90089-0271, United States.

Abstract

Two-dimensional (2D) nanoflakes have emerged as a class of materials that may impact electronic technologies in the near future. A challenging but rewarding work is to experimentally identify 2D materials and explore their properties. Here, we report the synthesis of a layered material, P20.56(1)Sb0.44(1), with a systematic study on characterizations and device applications. This material demonstrates a direct band gap of around 1.67 eV. Using a laser-cutting method, the thin flakes of this material can be separated into multiple segments. We have also fabricated field effect transistors based on few-layer P20.56(1)Sb0.44(1) flakes with a thickness down to a few nanometers. Interestingly, these field effect transistors show strong photoresponse within the wavelength range of visible light. At room temperature, we have achieved good mobility values (up to 58.96 cm2/V·s), a reasonably high on/off current ratio (∼103), and intrinsic responsivity up to 10 μA/W. Our results demonstrate the potential of P20.56(1)Sb0.44(1) thin flakes as a two-dimensional material for applications in visible light detectors.

KEYWORDS:

antimony-substituted violet phosphorus; field effect transistor; layered material; mobility; photoresponse

PMID:
28362482
DOI:
10.1021/acsnano.7b00798

Supplemental Content

Full text links

Icon for American Chemical Society
Loading ...
Support Center