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Nano Lett. 2017 Apr 12;17(4):2596-2602. doi: 10.1021/acs.nanolett.7b00400. Epub 2017 Mar 27.

Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects.

Author information

1
IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland.
2
ETH Zurich, Integrated Systems Laboratory , Gloriastrasse 35, 8092 Zurich, Switzerland.

Abstract

Coherent interconnection of quantum bits remains an ongoing challenge in quantum information technology. Envisioned hardware to achieve this goal is based on semiconductor nanowire (NW) circuits, comprising individual NW devices that are linked through ballistic interconnects. However, maintaining the sensitive ballistic conduction and confinement conditions across NW intersections is a nontrivial problem. Here, we go beyond the characterization of a single NW device and demonstrate ballistic one-dimensional (1D) quantum transport in InAs NW cross-junctions, monolithically integrated on Si. Characteristic 1D conductance plateaus are resolved in field-effect measurements across up to four NW-junctions in series. The 1D ballistic transport and sub-band splitting is preserved for both crossing-directions. We show that the 1D modes of a single injection terminal can be distributed into multiple NW branches. We believe that NW cross-junctions are well-suited as cross-directional communication links for the reliable transfer of quantum information as required for quantum computational systems.

KEYWORDS:

Nanowire; ballistic transport; conductance quantization; quantum network

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