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ACS Appl Mater Interfaces. 2017 Mar 29;9(12):10835-10846. doi: 10.1021/acsami.6b16458. Epub 2017 Mar 16.

Magnetoresistance Behavior of Conducting Filaments in Resistive-Switching NiO with Different Resistance States.

Zhao D1,2, Qiao S1,2, Luo Y1,3, Chen A1,2, Zhang P1,2, Zheng P4, Sun Z1,2, Guo M1,2, Chiang FK4, Wu J1,2, Luo J4,2, Li J4,2, Kokado S5, Wang Y1,2, Zhao Y1,2.

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Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University , Beijing 100084, China.
Collaborative Innovation Center of Quantum Matter , Beijing 100084, China.
Shandong Institute of Aerospace Electronics Technology , Yantai 264670, China.
Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences , Beijing 100190, China.
Department of Electronics and Materials Science, Graduate School of Integrated Science and Technology, Shizuoka University , Hamamatsu 432-8561, Japan.


The resistive switching (RS) effect in various materials has attracted much attention due to its interesting physics and potential for applications. NiO is an important system and its RS effect has been generally explained by the formation/rupture of Ni-related conducting filaments. These filaments are unique since they are formed by an electroforming process, so it is interesting to explore their magnetoresistance (MR) behavior, which can also shed light on unsolved issues such as the nature of the filaments and their evolution in the RS process, and this behavior is also important for multifunctional devices. Here, we focus on MR behavior in NiO RS films with different resistance states. Rich and interesting MR behaviors have been observed, including the normal and anomalous anisotropic magnetoresistance and tunneling magnetoresistance, which provide new insights into the nature of the filaments and their evolution in the RS process. First-principles calculation reveals the essential role of oxygen migration into the filaments during the RESET process and can account for the experimental results. Our work provides a new avenue for exploration of the conducting filaments in resistive switching materials and is significant for understanding the mechanism of RS effect and multifunctional devices.


anisotropic magnetoresistance; conducting filaments; first-principles calculation; resistive switching effect; tunneling magnetoresistance


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