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Microsc Microanal. 2017 Apr;23(2):291-299. doi: 10.1017/S1431927617000034. Epub 2017 Feb 20.

Correlating Atom Probe Tomography with Atomic-Resolved Scanning Transmission Electron Microscopy: Example of Segregation at Silicon Grain Boundaries.

Author information

1
1Institute of Physics (IA),RWTH Aachen University,Otto-Blumenthal-Straβe, 52074 Aachen,Germany.
2
3Central Facility for Electron Microscopy,RWTH Aachen University,Ahornstraβe 55, 52074 Aachen,Germany.
3
2Max-Planck-Institut für Eisenforschung GmbH,Max-Planck-Straβe 1, 40237 Düsseldorf,Germany.

Abstract

In the course of a thorough investigation of the performance-structure-chemistry interdependency at silicon grain boundaries, we successfully developed a method to systematically correlate aberration-corrected scanning transmission electron microscopy and atom probe tomography. The correlative approach is conducted on individual APT and TEM specimens, with the option to perform both investigations on the same specimen in the future. In the present case of a Σ9 grain boundary, joint mapping of the atomistic details of the grain boundary topology, in conjunction with chemical decoration, enables a deeper understanding of the segregation of impurities observed at such grain boundaries.

KEYWORDS:

atom probe tomography; correlative microscopy; grain boundary; scanning transmission electron microscopy; silicon

PMID:
28215198
DOI:
10.1017/S1431927617000034

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