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Nano Converg. 2016;3(1):13. doi: 10.1186/s40580-016-0073-y. Epub 2016 Jun 15.

Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs).

Author information

1
Department of Electronic Engineering, Sogang University, Seoul, 04107 Republic of Korea.

Abstract

The steady scaling-down of semiconductor device for improving performance has been the most important issue among researchers. Recently, as low-power consumption becomes one of the most important requirements, there have been many researches about novel devices for low-power consumption. Though scaling supply voltage is the most effective way for low-power consumption, performance degradation is occurred for metal-oxide-semiconductor field-effect transistors (MOSFETs) when supply voltage is reduced because subthreshold swing (SS) of MOSFETs cannot be lower than 60 mV/dec. Thus, in this thesis, hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) are investigated as one of the most promising alternatives to MOSFETs. By replacing source-side gate insulator with a high-k material, HG TFETs show higher on-current, suppressed ambipolar current and lower SS than conventional TFETs. Device design optimization through simulation was performed and fabrication based on simulation demonstrated that performance of HG TFETs were better than that of conventional TFETs. Especially, enlargement of gate insulator thickness while etching gate insulator at the source side was improved by introducing HF vapor etch process. In addition, the proposed HG TFETs showed higher performance than our previous results by changing structure of sidewall spacer by high-k etching process.

KEYWORDS:

Metal–oxide–semiconductor field-effect transistors (MOSFETS); Tunneling field-effect transistors (TFETs)

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