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Adv Mater. 2017 Feb;29(8). doi: 10.1002/adma.201605551. Epub 2016 Dec 19.

Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy.

Author information

1
School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA.
2
Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue de Rangueil, 31077, Toulouse, France.
3
LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, AZ, 85287, USA.

Abstract

A new member of the layered pseudo-1D material family-monoclinic gallium telluride (GaTe)-is synthesized by physical vapor transport on a variety of substrates. The [010] atomic chains and the resulting anisotropic behavior are clearly revealed. The GaTe flakes display multiple sharp photoluminescence emissions in the forbidden gap, which are related to defects localized around selected edges and grain boundaries.

KEYWORDS:

gallium telluride; physical vapor transport; pseudo-1D materials

PMID:
27990702
DOI:
10.1002/adma.201605551

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