Ultrahigh Energy Storage Performance of Lead-Free Oxide Multilayer Film Capacitors via Interface Engineering

Zixiong Sun; Chunrui Ma; Ming Liu; Jin Cui; Lu Lu; Jiangbo Lu; Xiaojie Lou; Lei Jin; Hong Wang; Chun-Lin Jia

doi:10.1002/adma.201604427

Ultrahigh Energy Storage Performance of Lead-Free Oxide Multilayer Film Capacitors via Interface Engineering

Adv Mater. 2017 Feb;29(5). doi: 10.1002/adma.201604427. Epub 2016 Nov 29.

Authors

Zixiong Sun¹, Chunrui Ma², Ming Liu¹, Jin Cui¹, Lu Lu¹, Jiangbo Lu¹, Xiaojie Lou³, Lei Jin⁴, Hong Wang¹, Chun-Lin Jia^{1

4}

Affiliations

¹ School of Electronic and Information Engineering and, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, P. R. China.
² State Key Laboratory for Mechanical Behavior of Materials and, School of Material Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, P. R. China.
³ Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an, 710049, China.
⁴ Peter Grünberg Institute and Ernst Ruska Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich, D-52425, Jülich, Germany.

PMID: 27897340
DOI: 10.1002/adma.201604427

Abstract

Ultrahigh energy storage density of 52.4 J cm^-3 with optimistic efficiency of 72.3% is achieved by interface engineering of epitaxial lead-free oxide multilayers at room temperature. Moreover, the excellent thermal stability of the performances provides solid basis for widespread applications of the thin film systems in modern electronic and power modules in harsh working environments.

Keywords: dielectrics; energy storage density; lead-free ceramic; thermal stability; thin films.