The Ge1-xSnx alloy is a promising material for optoelectronic applications. It offers a tunable wavelength in the infrared (IR) spectrum and high compatibility with complementary metal-oxide-semiconductor (CMOS) technology. However, difficulties in growing device quality Ge1-xSnx films has left the potentiality of this material unexplored. Recent advances in technological processes have renewed the interest toward this material paving the way to potential applications. In this work, we perform a numerical investigation on absorption coefficient, radiative recombination rate, and Auger recombination properties of intrinsic and doped Ge1-xSnx for application in the extended-short wavelength infrared and medium wavelength infrared spectrum ranges. We apply a Green's function based model to the Ge1-xSnx full electronic band structure determined through an empirical pseudopotential method and determine the dominant recombination mechanism between radiative and Auger processes over a wide range of injection levels.