High-performance n-type field-effect transistors based on a highly crystalline tricyanovinyldihydrofuran derivative

Hyun Ah Um; Ji Hyung Lee; Hionsuck Baik; Min Ju Cho; Dong Hoon Choi

doi:10.1039/c6cc06550c

High-performance n-type field-effect transistors based on a highly crystalline tricyanovinyldihydrofuran derivative

Chem Commun (Camb). 2016 Oct 27;52(88):13012-13015. doi: 10.1039/c6cc06550c.

Authors

Hyun Ah Um¹, Ji Hyung Lee¹, Hionsuck Baik², Min Ju Cho¹, Dong Hoon Choi¹

Affiliations

¹ Department of Chemistry, Research Institute for Natural Sciences, Korea University, 5 Anam-dong, Sungbuk-gu, Seoul 136-701, Republic of Korea. chominju@korea.ac.kr dhchoi8803@korea.ac.kr.
² Division of Analytical Research, Korea Basic Science Institute, 74 Inchon-ro, Sungbuk-gu, Seoul 136-713, Republic of Korea.

PMID: 27748480
DOI: 10.1039/c6cc06550c

Abstract

We propose a novel tricyanovinyldihydrofuran (TCF)-based molecule called DBOB-DTCF that is designed and synthesized for application in n-type field-effect transistors (FETs). It can be operated in a stable manner under ambient conditions. DBOB-DTCF is successfully fabricated as crystalline microplates (CMs) because of its capability of self-assembly. A high electron mobility of ∼1.9 cm² V^-1 s^-1 is observed for a CM-based FET, measured under ambient conditions. This suggests that TCF is an excellent acceptor unit that organizes air stable n-type organic semiconductors.