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ACS Appl Mater Interfaces. 2016 Oct 5;8(39):26169-26175. Epub 2016 Sep 21.

Artificial Synapses Based on in-Plane Gate Organic Electrochemical Transistors.

Author information

1
Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University , Changsha, Hunan 410083, P. R. China.
2
Department of Physics and Astronomy, University of Rochester , Rochester, New York 14627, United States.
3
School of Electronic Science & Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, P. R. China.

Abstract

Realization of biological synapses using electronic devices is regarded as the basic building blocks for neuromorphic engineering and artificial neural network. With the advantages of biocompatibility, low cost, flexibility, and compatible with printing and roll-to-roll processes, the artificial synapse based on organic transistor is of great interest. In this paper, the artificial synapse simulation by ion-gel gated organic field-effect transistors (FETs) with poly(3-hexylthiophene) (P3HT) active channel is demonstrated. Key features of the synaptic behaviors, such as paired-pulse facilitation (PPF), short-term plasticity (STP), self-tuning, the spike logic operation, spatiotemporal dentritic integration, and modulation are successfully mimicked. Furthermore, the interface doping processes of electrolyte ions between the active P3HT layer and ion gels is comprehensively studied for confirming the operating processes underlying the conductivity and excitatory postsynaptic current (EPSC) variations in the organic synaptic devices. This study represents an important step toward building future artificial neuromorphic systems with newly emerged ion gel gated organic synaptic devices.

KEYWORDS:

artificial synapses; electrochemical transistors; ion gel; neuromorphic systems; organic semiconductors

PMID:
27608136
DOI:
10.1021/acsami.6b08866

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