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Nano Lett. 2016 Oct 12;16(10):6416-6424. Epub 2016 Sep 12.

Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire.

Fang H1,2,3, Hu W1,2,3, Wang P1, Guo N1, Luo W1,3, Zheng D1,4, Gong F1,4, Luo M1, Tian H1, Zhang X1, Luo C5, Wu X5, Chen P1, Liao L4, Pan A6, Chen X1,2,3, Lu W1,2,3.

Author information

National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China.
Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei 230026, China.
University of Chinese Academy of Sciences , Beijing 100049, China.
Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University , Wuhan 430072, China.
Key Laboratory of Polar Materials and Devices of MOE, East China Normal University , Shanghai 200241, China.
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, College of Physics and Microelectronics, Hunan University , Changsha 410082, China.


One-dimensional InAs nanowires (NWs) have been widely researched in recent years. Features of high mobility and narrow bandgap reveal its great potential of optoelectronic applications. However, most reported work about InAs NW-based photodetectors is limited to the visible waveband. Although some work shows certain response for near-infrared light, the problems of large dark current and small light on/off ratio are unsolved, thus significantly restricting the detectivity. Here in this work, a novel "visible light-assisted dark-current suppressing method" is proposed for the first time to reduce the dark current and enhance the infrared photodetection of single InAs NW photodetectors. This method effectively increases the barrier height of the metal-semiconductor contact, thus significantly making the device a metal-semiconductor-metal (MSM) photodiode. These MSM photodiodes demonstrate broadband detection from less than 1 μm to more than 3 μm and a fast response of tens of microseconds. A high detectivity of ∼1012 Jones has been achieved for the wavelength of 2000 nm at a low bias voltage of 0.1 V with corresponding responsivity of as much as 40 A/W. Even for the incident wavelength of 3113 nm, a detectivity of ∼1010 Jones and a responsivity of 0.6 A/W have been obtained. Our work has achieved an extended detection waveband for single InAs NW photodetector from visible and near-infrared to mid-infrared. The excellent performance for infrared detection demonstrated the great potential of narrow bandgap NWs for future infrared optoelectronic applications.


MSM photodiodes; Single InAs nanowire; mid-infrared photodetectors

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