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Adv Mater. 2016 Nov;28(41):9204-9209. doi: 10.1002/adma.201601995. Epub 2016 Aug 29.

Thinness- and Shape-Controlled Growth for Ultrathin Single-Crystalline Perovskite Wafers for Mass Production of Superior Photoelectronic Devices.

Author information

1
Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, and Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China.
2
Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, and Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China. zyang@snnu.edu.cn.
3
Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, and Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China. szliu@dicp.ac.cn.
4
iChEM, Dalian Institute of Chemical Physics, Dalian National Laboratory for Clean Energy, Chinese Academy of Sciences, Dalian, 116023, P. R. China. szliu@dicp.ac.cn.

Abstract

Thinness-controlled perovskite wafers are directly prepared using a geometry-regulated dynamic-flow reaction system. It is found that the wafers are a superior material for photodetectors with a photocurrent response ≈350 times higher than that made of microcrystalline thin films. Moreover, the wafers are compatible with mass production of integrated circuits.

KEYWORDS:

controlled growth; perovskites; photodetectors; ultrathin; wafers

PMID:
27569400
DOI:
10.1002/adma.201601995

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