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Inorg Chem. 2016 Sep 6;55(17):8381-6. doi: 10.1021/acs.inorgchem.6b00747. Epub 2016 Aug 23.

Effect of Zinc Incorporation on the Performance of Red Light Emitting InP Core Nanocrystals.

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Semiconductor Nanoelectronics (PGI-9), Forschungszentrum Jülich, JARA-FIT , 52425 Jülich, Germany.
IPIT & Department of Physics, Chonbuk National University , Jeonju 54896, Republic of Korea.
Central Institute for Engineering, Electronics and Analytics (ZEA-3), Forschungszentrum Jülich , 52425 Jülich, Germany.
Ernst Ruska Centre, PGI-5, Forschungszentrum Jülich, JARA-FIT , 52425 Jülich, Germany.
School of Materials Science and Engineering, Nanyang Technological University , Singapore 639798, Singapore.


This report presents a systematic study on the effect of zinc (Zn) carboxylate precursor on the structural and optical properties of red light emitting InP nanocrystals (NCs). NC cores were assessed using X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), energy-dispersive X-ray spectroscopy (EDX), and high-resolution transmission electron microscopy (HRTEM). When moderate Zn:In ratios in the reaction pot were used, the incorporation of Zn in InP was insufficient to change the crystal structure or band gap of the NCs, but photoluminescence quantum yield (PLQY) increased dramatically compared with pure InP NCs. Zn was found to incorporate mostly in the phosphate layer on the NCs. PL, PLQY, and time-resolved PL (TRPL) show that Zn carboxylates added to the precursors during NC cores facilitate the synthesis of high-quality InP NCs by suppressing nonradiative and sub-band-gap recombination, and the effect is visible also after a ZnS shell is grown on the cores.

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