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ACS Appl Mater Interfaces. 2016 Sep 7;8(35):23222-9. doi: 10.1021/acsami.6b02933. Epub 2016 Aug 25.

Epitaxial 2D SnSe2/ 2D WSe2 van der Waals Heterostructures.

Author information

1
Institute of Nanoscience and Nanotechnology, National Center for Scientific Research "DEMOKRITOS" , 15310, Athens, Greece.
2
University of Athens , Department of Physics, Section of Solid State Physics, 15684 Athens, Greece.
3
National Technical University of Athens , Department of Physics, 15780 Athens, Greece.

Abstract

van der Waals heterostructures of 2D semiconductor materials can be used to realize a number of (opto)electronic devices including tunneling field effect devices (TFETs). It is shown in this work that high quality SnSe2/WSe2 vdW heterostructure can be grown by molecular beam epitaxy on AlN(0001)/Si(111) substrates using a Bi2Se3 buffer layer. A valence band offset of 0.8 eV matches the energy gap of SnSe2 in such a way that the VB edge of WSe2 and the CB edge of SnSe2 are lined up, making this materials combination suitable for (nearly) broken gap TFETs.

KEYWORDS:

2D semiconductors; SnSe2; WSe2; molecular beam epitaxy; tunneling field effect transistors; van der Waals heterostructures

PMID:
27537619
DOI:
10.1021/acsami.6b02933

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