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Nat Commun. 2016 Aug 11;7:12357. doi: 10.1038/ncomms12357.

Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes.

Author information

1
Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.
2
School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.
3
Department of Physics, University of Washington, Seattle, Washington 98195, USA.
4
School of Civil Engineering, Hefei University of Technology, Hefei 230009, China.
5
Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA.
6
Materials Science &Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
7
Department of Mechanical Engineering, University of Houston, Houston, Texas 77204, USA.
8
Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, USA.
9
NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore.
10
CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, Singapore 637553, Singapore.

Abstract

Two-dimensional (2D) materials have emerged as promising candidates for various optoelectronic applications based on their diverse electronic properties, ranging from insulating to superconducting. However, cooperative phenomena such as ferroelectricity in the 2D limit have not been well explored. Here, we report room-temperature ferroelectricity in 2D CuInP2S6 (CIPS) with a transition temperature of ∼320 K. Switchable polarization is observed in thin CIPS of ∼4 nm. To demonstrate the potential of this 2D ferroelectric material, we prepare a van der Waals (vdW) ferroelectric diode formed by CIPS/Si heterostructure, which shows good memory behaviour with on/off ratio of ∼100. The addition of ferroelectricity to the 2D family opens up possibilities for numerous novel applications, including sensors, actuators, non-volatile memory devices, and various vdW heterostructures based on 2D ferroelectricity.

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